TISP4xxxJ1BJ Overvoltage Protector Series
ITU-T K.20, K.45 and K.21 Designs (Continued)
RING to TIP Voltages
RING to GROUND,
TIP to GROUND Voltages
ITU-T Y Configuration Parts and Part Voltages
R1a = R1b = 6.5 ?
V DRM
V
± 550
± 640
V (BO)
V
± 700
± 790
V DRM
V
± 550
± 640
V (BO)
V
± 700
± 790
Th1a + Th1b
Part #
TISP3350T3BJ
TISP3395T3BJ
Th2
Part #
TISP4350J1BJ
TISP4395J1BJ
V DRM
V
± 275
± 320
V (BO)
V
± 350
± 395
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to
GROUND voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage
limitation is given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often
the breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ± 165 V V (BO) parts for Th1a
and Th1b, the RING to TIP voltage is limited to ± 330 V. Using a higher voltage ± 350 V V (BO) part for Th2 limits the insulation stress to ± 515 V.
Figure 17 and its following table is for a GR-1089-CORE compliant design.
RING to TIP Voltages
RING to GROUND,
TIP to GROUND Voltages
GR-1089-CORE Y Configuration Parts and Part Voltages
V DRM
V
V (BO)
V
V DRM
V
V (BO)
V
Part #
Th1a, Th1b
V DRM
V
V (BO)
V
Part #
Th2
V DRM
V
V (BO)
V
± 270
± 330
± 410
± 515
TISP4165H3BJ
± 135
± 165
TISP4350J1BJ
± 275
± 350
T1
TIP
RING
F1b
C1
Voltage
C1
TIP
F1a
Limit
RING
T1 or PW
Insulation
Breakdown
AI4JAH
Th1a
TISP4165H3BJ
Th1b
TISP4165H3BJ
Th2
TISP4350J1BJ
Figure 16. ADSL Modem Interface Voltage Limitations
Figure 17. Asymmetrical Design for US ADSL Modems
An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ± 410 V off-state voltage, this
may seem unnecessary as modern primary protectors will switch at lower voltages and automatically coordinate. On a perfect longitudinal
waveform this is true. However, the ITU-T also applies a transverse (metallic) test as well, to simulate non-simultaneous switching of the
primary protection. In this case, one conductor is grounded, which places the RING to TIP protection in parallel with the unswitched primary
protector. The ± 270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089-
CORE conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary
protector, is diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.
SEPTEMBER 2001 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
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TISP4070J3BJR-S 功能描述:硅对称二端开关元件 PROTECTOR - SINGLE BIDIRECTIONAL RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
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TISP4070L3AJ 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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TISP4070L3AJR-S 功能描述:硅对称二端开关元件 BIDIRECTIONAL PRTCTR 58volts RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP4070L3BJ 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4070L3BJR 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流(在 VDRM IDRM 下): 保持电流(Ih 最大值):50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA